Show simple item record

dc.contributor.authorCielaszyk, Eric S.en_US
dc.contributor.authorKirmse, Karen H.R.en_US
dc.contributor.authorStewart, R.A.en_US
dc.contributor.authorWendt, Amy E.en_US
dc.date.accessioned2007-07-13T19:24:47Z
dc.date.available2007-07-13T19:24:47Z
dc.date.issued1995en_US
dc.identifier.citationThe following article appeared in Cielaszyk, E.S., Kirmse, K.H.R., Stewart, R.A., & Wendt, A.E. (1995). Mechanisms For Polycrystalline Silicon Defect Passivation By Hydrogenation In An Electron Cyclotron Resonance Plasma. Applied Physics Letters, 67(21), 3099-101. and may be found at http://link.aip.org/link/?apl/67/3099en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/9980
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent49306 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://apl.aip.org/en_US
dc.rightsCopyright 1995 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleMechanisms for polycrystalline silicon defect passivation by hydrogenation in an electron cyclotron resonance plasmaen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.114877en_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record