High Schottky barrier height of the Al/n-GaAs diodes achieved by sputter deposition
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Citation
The following article appeared in Chen, C.-P., Chang, Y.A., Huang, J.-W., & Kuech, T.F. (1994). High Schottky Barrier Height Of The Al/N Ga As Diodes Achieved By Sputter Deposition. Applied Physics Letters, 64(11), 1413-15. and may be found at http://link.aip.org/link/?apl/64/1413