| dc.contributor.author | Redwing, Joan M. | en_US |
| dc.contributor.author | Kuech, Thomas F. | en_US |
| dc.contributor.author | Gordon, Douglas C. | en_US |
| dc.contributor.author | Vaartstra, Brian A. | en_US |
| dc.contributor.author | Lau, Silvanus S. | en_US |
| dc.date.accessioned | 2007-07-13T19:24:35Z | |
| dc.date.available | 2007-07-13T19:24:35Z | |
| dc.date.issued | 1994 | en_US |
| dc.identifier.citation | The following article appeared in Redwing, J.M., Kuech, T.F., Gordon, D.C., Vaartstra, B.A., & Lau, S.S. (1994). Growth Studies Of Erbium Doped Ga As Deposited By Metalorganic Vapor Phase Epitaxy Using Novel Cyclopentadienyl Based Erbium Sources. Journal Of Applied Physics, 76(3), 1585-91. and may be found at http://link.aip.org/link/?jap/76/1585 | en_US |
| dc.identifier.uri | http://digital.library.wisc.edu/1793/9952 | |
| dc.description | This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. | en_US |
| dc.format.extent | 929117 bytes | |
| dc.format.mimetype | application/pdf | en_US |
| dc.format.mimetype | application/pdf | |
| dc.relation.ispartof | http://www.aip.org | en_US |
| dc.relation.ispartof | http://jap.aip.org | en_US |
| dc.rights | Copyright 1994 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | en_US |
| dc.title | Growth studies of erbium-doped GaAs deposited by metalorganic vapor phase epitaxy using novel cyclopentadienyl-based erbium sources | en_US |
| dc.identifier.doi | http://dx.doi.org/10.1063/1.357737 | en_US |
