Growth studies of erbium-doped GaAs deposited by metalorganic vapor phase epitaxy using novel cyclopentadienyl-based erbium sources
Redwing, Joan M.
Kuech, Thomas F.
Gordon, Douglas C.
Vaartstra, Brian A.
Lau, Silvanus S.
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The following article appeared in Redwing, J.M., Kuech, T.F., Gordon, D.C., Vaartstra, B.A., & Lau, S.S. (1994). Growth Studies Of Erbium Doped Ga As Deposited By Metalorganic Vapor Phase Epitaxy Using Novel Cyclopentadienyl Based Erbium Sources. Journal Of Applied Physics, 76(3), 1585-91. and may be found at http://link.aip.org/link/?jap/76/1585