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Growth studies of erbium-doped GaAs deposited by metalorganic vapor phase epitaxy using novel cyclopentadienyl-based erbium sources

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Author(s)
Redwing, Joan M.; Kuech, Thomas F.; Gordon, Douglas C.; Vaartstra, Brian A.; Lau, Silvanus S.
Citation
The following article appeared in Redwing, J.M., Kuech, T.F., Gordon, D.C., Vaartstra, B.A., & Lau, S.S. (1994). Growth Studies Of Erbium Doped Ga As Deposited By Metalorganic Vapor Phase Epitaxy Using Novel Cyclopentadienyl Based Erbium Sources. Journal Of Applied Physics, 76(3), 1585-91. and may be found at http://link.aip.org/link/?jap/76/1585
Date
1994
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http://www.aip.org; http://jap.aip.org
Description
This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
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http://digital.library.wisc.edu/1793/9952 
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