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dc.contributor.authorHuang, Jen-Wuen_US
dc.contributor.authorKuech, Thomas F.en_US
dc.date.accessioned2007-07-13T19:24:34Z
dc.date.available2007-07-13T19:24:34Z
dc.date.issued1994en_US
dc.identifier.citationThe following article appeared in Huang, J.W., & Kuech, T.F. (1994). Multiple Deep Levels In Metalorganic Vapor Phase Epitaxy Ga As Grown By Controlled Oxygen Incorporation. Applied Physics Letters, 65(5), 604-6. and may be found at http://link.aip.org/link/?apl/65/604en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/9950
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent443224 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://apl.aip.org/en_US
dc.rightsCopyright 1994 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleMultiple deep levels in metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporationen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.112270en_US


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