Multiple deep levels in metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporation
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Citation
The following article appeared in Huang, J.W., & Kuech, T.F. (1994). Multiple Deep Levels In Metalorganic Vapor Phase Epitaxy Ga As Grown By Controlled Oxygen Incorporation. Applied Physics Letters, 65(5), 604-6. and may be found at http://link.aip.org/link/?apl/65/604