| dc.contributor.author | Chen, Charlie Chung-Ping | en_US |
| dc.contributor.author | Chang, Y. Austin | en_US |
| dc.contributor.author | Kuech, Thomas F. | en_US |
| dc.date.accessioned | 2007-07-13T19:24:33Z | |
| dc.date.available | 2007-07-13T19:24:33Z | |
| dc.date.issued | 1995 | en_US |
| dc.identifier.citation | The following article appeared in Chen, C.-P., Chang, Y.A., & Kuech, T.F. (1995). Schottky Barrier Enhancement Using Reacted Ni2 Al3/Ni/N Ga As, Ni/Al/Ni/N Ga As, And Ni Al/Al/Ni/N Ga As Contacts. Journal Of Applied Physics, 77(9), 4777-82. and may be found at http://link.aip.org/link/?jap/77/4777 | en_US |
| dc.identifier.uri | http://digital.library.wisc.edu/1793/9948 | |
| dc.description | This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. | en_US |
| dc.format.extent | 801196 bytes | |
| dc.format.mimetype | application/pdf | en_US |
| dc.format.mimetype | application/pdf | |
| dc.relation.ispartof | http://www.aip.org | en_US |
| dc.relation.ispartof | http://jap.aip.org | en_US |
| dc.rights | Copyright 1995 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | en_US |
| dc.title | Schottky barrier enhancement using reacted Ni2Al3/Ni/n-GaAs, Ni/Al/Ni/n-GaAs, and NiAl/Al/Ni/n-GaAs contacts | en_US |
| dc.type | Article | |
| dc.identifier.doi | http://dx.doi.org/10.1063/1.359397 | en_US |
