Schottky barrier enhancement using reacted Ni2Al3/Ni/n-GaAs, Ni/Al/Ni/n-GaAs, and NiAl/Al/Ni/n-GaAs contacts
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1995Author
Chen, Charlie Chung-Ping
Chang, Y. Austin
Kuech, Thomas F.
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http://digital.library.wisc.edu/1793/9948Description
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Citation
The following article appeared in Chen, C.-P., Chang, Y.A., & Kuech, T.F. (1995). Schottky Barrier Enhancement Using Reacted Ni2 Al3/Ni/N Ga As, Ni/Al/Ni/N Ga As, And Ni Al/Al/Ni/N Ga As Contacts. Journal Of Applied Physics, 77(9), 4777-82. and may be found at http://link.aip.org/link/?jap/77/4777