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dc.contributor.authorJohn, Vinoden_US
dc.contributor.authorSuh, Bum-Seoken_US
dc.contributor.authorLipo, Thomas A.en_US
dc.date.accessioned2007-07-13T19:24:18Z
dc.date.available2007-07-13T19:24:18Z
dc.date.issued1999en_US
dc.identifier.citationJohn, V., Suh, B.S., & Lipo, T. A. (1999). High Performance Active Gate Drive For High Power Igbt'S. Ieee Transactions On Industry Applications, 35(5), 1108-1117.en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/9916
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent251130 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.publisherInstitute of Electrical and Electronics Engineers Inc., Piscataway, NJ, USAen_US
dc.relation.ispartofhttp://www.ieee.org/en_US
dc.relation.ispartofhttp://ieeexplore.ieee.org/servlet/opac?punumber=28en_US
dc.rightsCopyright 1999 Institute of Electrical and Electronics Engineersen_US
dc.rights©20xx IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_US
dc.titleHigh-performance active gate drive for high-power IGBT'sen_US
dc.identifier.doihttp://dx.doi.org/10.1109/28.793372en_US


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