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730-nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells

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dc.contributor.author Al-Muhanna, Ali en_US
dc.contributor.author Wade, Jerome K. en_US
dc.contributor.author Mawst, Luke J. en_US
dc.contributor.author Fu, Richard J. en_US
dc.date.accessioned 2007-07-13T19:22:20Z
dc.date.available 2007-07-13T19:22:20Z
dc.date.issued 1998 en_US
dc.identifier.citation The following article appeared in A.M.A., Wade, J.K., Mawst, L.J., & Fu, R.J. (1998). 730 Nm Emitting Al Free Active Region Diode Lasers With Compressively Strained In Ga As P Quantum Wells. Applied Physics Letters, 72(6), 641-643. and may be found at http://link.aip.org/link/?apl/72/641 en_US
dc.identifier.uri http://digital.library.wisc.edu/1793/9654
dc.description This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. en_US
dc.description.provenance Made available in DSpace on 2007-07-13T19:22:20Z (GMT). No. of bitstreams: 1 file_1.pdf: 66839 bytes, checksum: 1241fc826601be67c8fd775964fe002a (MD5) Previous issue date: 1998 en
dc.format.extent 66839 bytes
dc.format.mimetype application/pdf en_US
dc.format.mimetype application/pdf
dc.publisher Am Inst Phys, Woodbury, NY, USA en_US
dc.relation.ispartof http://www.aip.org en_US
dc.relation.ispartof http://apl.aip.org/ en_US
dc.rights Copyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. en_US
dc.title 730-nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells en_US
dc.identifier.doi http://dx.doi.org/10.1063/1.120831 en_US

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