730-nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells
Wade, Jerome K.
Mawst, Luke J.
Fu, Richard J.
Am Inst Phys, Woodbury, NY, USA
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The following article appeared in A.M.A., Wade, J.K., Mawst, L.J., & Fu, R.J. (1998). 730 Nm Emitting Al Free Active Region Diode Lasers With Compressively Strained In Ga As P Quantum Wells. Applied Physics Letters, 72(6), 641-643. and may be found at http://link.aip.org/link/?apl/72/641