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dc.contributor.authorEvans, Paul G.en_US
dc.contributor.authorRugheimer, Paul P.en_US
dc.contributor.authorLagally, Max G.en_US
dc.contributor.authorLee, Chung-Hoonen_US
dc.contributor.authorLal, Amiten_US
dc.contributor.authorXiao, Yananen_US
dc.contributor.authorLai, Barryen_US
dc.contributor.authorCai, Zhonghouen_US
dc.date.accessioned2007-07-13T19:18:09Z
dc.date.available2007-07-13T19:18:09Z
dc.date.issued2005en_US
dc.identifier.citationThe following article appeared in Evans, P.G., Rugheimer, P.P., Lagally, M.G., Lee, C.H., Lal, A., Xiao, Y., et al. (2005). Microfabricated Strained Substrates For Ge Epitaxial Growth. Journal Of Applied Physics, 97(10), -103501. and may be found at http://link.aip.org/link/?jap/97/en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/9100
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent415893 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://jap.aip.orgen_US
dc.rightsCopyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleMicrofabricated strained substrates for Ge epitaxial growthen_US


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