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dc.contributor.authorIngerly, Douglas B.en_US
dc.contributor.authorChang, Y. Austinen_US
dc.contributor.authorChen, Yongen_US
dc.date.accessioned2007-07-13T19:17:01Z
dc.date.available2007-07-13T19:17:01Z
dc.date.issued1999en_US
dc.identifier.citationThe following article appeared in Ingerly, D.B., Chang, Y.A., & Chen, Y. (1999). The Electrical Behavior Of Pt3 In7 And Ni In Contacts To P Ga N. Applied Physics Letters, 74(17), 2480-2. and may be found at http://link.aip.org/link/?apl/74/2480en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/8952
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent149478 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://apl.aip.org/en_US
dc.rightsCopyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleThe electrical behavior of Pt3In7 and NiIn contacts to p-GaNen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.124168en_US


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