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dc.contributor.authorPelto, Christopher M.en_US
dc.contributor.authorChang, Y. Austinen_US
dc.contributor.authorChen, Yongen_US
dc.contributor.authorWilliams, R. Stanleyen_US
dc.date.accessioned2007-07-13T19:16:57Z
dc.date.available2007-07-13T19:16:57Z
dc.date.issued2002en_US
dc.identifier.citationThe following article appeared in Pelto, C.M., Chang, Y.A., Yong Chen, & Williams, R.S. (2002). Thermally Stable, Oxidation Resistant Capping Technology For Ti/Al Ohmic Contacts To N Ga N. Journal Of Applied Physics, 92(8), 4283-9. and may be found at http://link.aip.org/link/?jap/92/4283en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/8944
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent78272 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://jap.aip.orgen_US
dc.rightsCopyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleThermally stable, oxidation resistant capping technology for Ti/Al ohmic contacts to n-GaNen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.1507809en_US


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