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    Thermally stable, oxidation resistant capping technology for Ti/Al ohmic contacts to n-GaN

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    Date
    2002
    Author
    Pelto, Christopher M.
    Chang, Y. Austin
    Chen, Yong
    Williams, R. Stanley
    Publisher
    American Institute of Physics
    Metadata
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    Permanent Link
    http://digital.library.wisc.edu/1793/8944
    Related Material/Data
    http://www.aip.org
    http://jap.aip.org
    DOI
    http://dx.doi.org/10.1063/1.1507809
    Description
    This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
    Citation
    The following article appeared in Pelto, C.M., Chang, Y.A., Yong Chen, & Williams, R.S. (2002). Thermally Stable, Oxidation Resistant Capping Technology For Ti/Al Ohmic Contacts To N Ga N. Journal Of Applied Physics, 92(8), 4283-9. and may be found at http://link.aip.org/link/?jap/92/4283
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