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Electrically isolated SiGe quantum dots

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dc.contributor.author Tevaarwerk, Emma en_US
dc.contributor.author Rugheimer, Paul P. en_US
dc.contributor.author Castellini, Olivia M. en_US
dc.contributor.author Keppel, Drew Garvin en_US
dc.contributor.author Utley, S.T. en_US
dc.contributor.author Savage, Donald E. en_US
dc.contributor.author Lagally, Max G. en_US
dc.contributor.author Eriksson, Mark A. en_US
dc.date.accessioned 2007-07-13T19:15:36Z
dc.date.available 2007-07-13T19:15:36Z
dc.date.issued 2002 en_US
dc.identifier.citation The following article appeared in Tevaarwerk, E., Rugheimer, P., Castellini, O.M., Keppel, D.G., Utley, S.T., Savage, D.E., et al. (2002). Electrically Isolated Si Ge Quantum Dots. Applied Physics Letters, 80(24), 4626-8. and may be found at http://link.aip.org/link/?apl/80/4626 en_US
dc.identifier.uri http://digital.library.wisc.edu/1793/8766
dc.description This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. en_US
dc.description.provenance Made available in DSpace on 2007-07-13T19:15:36Z (GMT). No. of bitstreams: 1 file_1.pdf: 278710 bytes, checksum: 3100de6990baf788c950c7e281cf2a37 (MD5) Previous issue date: 2002 en
dc.format.extent 278710 bytes
dc.format.mimetype application/pdf en_US
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dc.publisher American Institute of Physics en_US
dc.relation.ispartof http://www.aip.org en_US
dc.relation.ispartof http://apl.aip.org/ en_US
dc.rights Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. en_US
dc.title Electrically isolated SiGe quantum dots en_US
dc.identifier.doi http://dx.doi.org/10.1063/1.1484251 en_US

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