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dc.contributor.authorDing, Jien_US
dc.contributor.authorHershkowitz, Noahen_US
dc.date.accessioned2007-07-13T19:15:05Z
dc.date.available2007-07-13T19:15:05Z
dc.date.issued1996en_US
dc.identifier.citationThe following article appeared in Ji Ding, & Hershkowitz, N. (1996). Symmetric Rate Model For Fluorocarbon Plasma Etching Of Si O2. Applied Physics Letters, 68(12), 1619-21. and may be found at http://link.aip.org/link/?apl/68/1619en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/8698
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent68413 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://apl.aip.org/en_US
dc.rightsCopyright 1996 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleSymmetric rate model for fluorocarbon plasma etching of SiO2en_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.115670en_US


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