Modeling of the Thermal Response and the Thermal Distortion of Optical Mask during Optical Lithography Exposure Process
Date
1999Author
Abdo, Amr Y.
Publisher
University of Wisconsin-Madison
Metadata
Show full item recordAbstract
Optical lithography is the only commercial method for producing integrated circuits chips
in 1999, but it may be replaced by other technologies due to its minimum feature size
limit. The demand of faster integrated circuits chips continuously drives down the
feature size on these microchips. To extend the optical lithography technology minimum
feature size limit, all the mask-related distortions must be eliminated or minimized.
This work is to model and predict the thermal distortion of optical mask during full field
and scanning exposure processes to help the industry in its effort to extend the life of the
optical lithography below the 0.10 μm feature size limit. Thermal and structural
modeling of the optical mask during full field and scanning exposures for both fused
silica and calcium fluoride are presented in this work.
An averaging technique is developed and used to predict the thermal distortion during
both full field and scanning exposure processes to cut down the required computational
time for the simulation. It was found that the calcium fluoride is not suitable for optical
lithography masks materials as an alternative for fused silica for below 157-nm light
wavelength.
Subject
Thesis (M.S.)--University of Wisconsin--Madison, 1999.
Dissertations Academic Mechanical Engineering.
University of Wisconsin--Madison. College of Engineering.
Permanent Link
http://digital.library.wisc.edu/1793/7662Description
Under the supervision of Professors William A. Beckman, John W. Mitchell, and Roxann L. Engelstad
Citation
Abdo, A.Y. (1999). Modeling of the Thermal Response and the Thermal Distortion of Optical Mask during Optical Lithography Exposure Process. Master's Thesis, University of Wisconsin-Madison.