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Evidence from atomistic simulations of fluctuation electron microscopy for preferred local orientations in amorphous silicon

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dc.contributor.author Khare, S. V.
dc.contributor.author Nahkmanson, S. M.
dc.contributor.author Voyles, P. M.
dc.contributor.author Keblinski, P.
dc.contributor.author Abelson, J. R.
dc.date.accessioned 2012-12-01T19:46:19Z
dc.date.available 2012-12-01T19:46:19Z
dc.date.issued 2004-08
dc.identifier.citation Applied Physics Letters 85, 745 (2004) en
dc.identifier.uri http://digital.library.wisc.edu/1793/63504
dc.description.abstract Simulations from a family of atomistic structural models for unhydrogenated amorphous silicon suggest that fluctuation electron microscopy experiments have observed orientational order of paracrystalline grains in amorphous silicon. This order may consist of correlations in the orientation of nearby paracrystalline grains or anisotropy in the grain shape. This observation makes a natural connection to the known growth modes of microcrystalline silicon and may be useful for other materials systems. en
dc.description.provenance Submitted by Paul Gildrie-Voyles (voyles@engr.wisc.edu) on 2012-12-01T19:46:19Z No. of bitstreams: 1 Khare anisotropic a-Si APL 2004.pdf: 61814 bytes, checksum: 5faf6b362bff9dccaacbb2a4d665412c (MD5) en
dc.description.provenance Made available in DSpace on 2012-12-01T19:46:19Z (GMT). No. of bitstreams: 1 Khare anisotropic a-Si APL 2004.pdf: 61814 bytes, checksum: 5faf6b362bff9dccaacbb2a4d665412c (MD5) Previous issue date: 2004-08 en
dc.subject fluctuation electron microscopy en
dc.subject medium range order en
dc.subject amorphous silicon en
dc.title Evidence from atomistic simulations of fluctuation electron microscopy for preferred local orientations in amorphous silicon en
dc.type Article en

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