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dc.contributor.authorKhare, S. V.
dc.contributor.authorNahkmanson, S. M.
dc.contributor.authorVoyles, P. M.
dc.contributor.authorKeblinski, P.
dc.contributor.authorAbelson, J. R.
dc.date.accessioned2012-12-01T19:46:19Z
dc.date.available2012-12-01T19:46:19Z
dc.date.issued2004-08
dc.identifier.citationApplied Physics Letters 85, 745 (2004)en
dc.identifier.urihttp://digital.library.wisc.edu/1793/63504
dc.description.abstractSimulations from a family of atomistic structural models for unhydrogenated amorphous silicon suggest that fluctuation electron microscopy experiments have observed orientational order of paracrystalline grains in amorphous silicon. This order may consist of correlations in the orientation of nearby paracrystalline grains or anisotropy in the grain shape. This observation makes a natural connection to the known growth modes of microcrystalline silicon and may be useful for other materials systems.en
dc.subjectfluctuation electron microscopyen
dc.subjectmedium range orderen
dc.subjectamorphous siliconen
dc.titleEvidence from atomistic simulations of fluctuation electron microscopy for preferred local orientations in amorphous siliconen
dc.typeArticleen


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