Evidence from atomistic simulations of fluctuation electron microscopy for preferred local orientations in amorphous silicon

File(s)
Date
2004-08Author
Khare, S. V.
Nahkmanson, S. M.
Voyles, P. M.
Keblinski, P.
Abelson, J. R.
Metadata
Show full item recordAbstract
Simulations from a family of atomistic structural models for unhydrogenated amorphous silicon suggest that fluctuation electron microscopy experiments have observed orientational order of paracrystalline grains in amorphous silicon. This order may consist of correlations in the orientation of nearby paracrystalline grains or anisotropy in the grain shape. This observation makes a natural connection to the known growth modes of microcrystalline silicon and may be useful for other materials systems.
Subject
fluctuation electron microscopy
medium range order
amorphous silicon
Permanent Link
http://digital.library.wisc.edu/1793/63504Type
Article
Citation
Applied Physics Letters 85, 745 (2004)