Now showing items 1-6 of 6
Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy
We report on the mechanisms governing electron transport using a comprehensive set of ZnO layers heavily doped with Ga (GZO) grown by plasma-enhanced molecular-beam epitaxy on a-plane sapphire substrates with varying ...
Donor behavior of Sb in ZnO
Electrical behavior of Sb in ZnO:Sb layers doped in a wide concentration range was studied using temperature dependent Hall effect measurements. The layers were grown by plasma-enhanced molecular beam epitaxy, and the Sb ...
Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy
We report microstructural characterization of heavily Ga-doped ZnO (GZO) thin films on GaN and sapphire by aberration-corrected scanning transmission electron microscopy. Growth under oxygen-rich and metal-rich growth ...
High-Jc MgB2 Josephson junctions with operating temperature up to 40 K
Sandwich-type MgB2 /MgO/MgB2 Josephson junctions with Au or MgB2 interconnection were fabricated using hybrid physical-chemical vapor deposited MgB2 thin films and RF-magnetron-sputtered MgO barrier. The junctions show ...
Expitaxial growth and magnetic propreties of Fe3O4 flims on TiN buffered Si(001), Si(110), and Si(111) substrates
Epitaxial Fe3O4 thin films were grown on TiN buffered Si (001) , Si( 110) , and Si( 111) substrates by dc reactive sputtering deposition. Both Fe3O4 films and TiN buffer are fully epitaxial when grown at substrate ...
Nanoscale Structure and Relaxation in Zr50Cu45Al5 Bulk Metallic Glass
Hybrid reverse Monte Carlo simulations of the structure of Zr50Cu45Al5 bulk metallic glass incorporating medium-range structure from fluctuation electron microscopy data and short-range structure from an embedded atom ...