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Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy
We report on the mechanisms governing electron transport using a comprehensive set of ZnO layers heavily doped with Ga (GZO) grown by plasma-enhanced molecular-beam epitaxy on a-plane sapphire substrates with varying ...
Donor behavior of Sb in ZnO
Electrical behavior of Sb in ZnO:Sb layers doped in a wide concentration range was studied using temperature dependent Hall effect measurements. The layers were grown by plasma-enhanced molecular beam epitaxy, and the Sb ...
Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy
We report microstructural characterization of heavily Ga-doped ZnO (GZO) thin films on GaN and sapphire by aberration-corrected scanning transmission electron microscopy. Growth under oxygen-rich and metal-rich growth ...