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    • Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition 

      Ho, M.-Y.; Gong, H.; Wilk, G. D.; Busch, B. W.; Green, M. L.; Voyles, P. M.; Muller, D. A.; Bude, M.; Lin, W. H.; See, A.; Loomans, M. E.; Lahiri, S. K.; Raisanen, Petri I. (2003-02)
      We report the effects of annealing on the morphology and crystallization kinetics for the high-k gate dielectric replacement candidate hafnium oxide (HfO2). HfO2 films were grown by atomic layer deposition (ALD) on thermal ...