InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality

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Date
1999Author
Moran, Peter D.
Hansen, Darren Michael
Matyi, Richard J.
Cederberg, Jeffrey G.
Mawst, Luke J.
Kuech, Thomas F.
Publisher
American Institute of Physics Inc
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http://digital.library.wisc.edu/1793/11088Description
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Citation
The following article appeared in Moran, P.D., Hansen, D.M., Matyi, R.J., Cederberg, J.G., Mawst, L.J., & Kuech, T.F. (1999). In Ga As Heteroepitaxy On Ga As Compliant Substrates: X Ray Diffraction Evidence Of Enhanced Relaxation And Improved Structural Quality. Applied Physics Letters, 75(11), 1559-1561. and may be found at http://link.aip.org/link/?apl/75/1559