Low-temperature sensitive, compressively strained InGaAsP active (λ = 0.78-0.85 µm) region diode lasers
Mawst, Luke J.
Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ, USA
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Tansu, N., Zhou, D., & Mawst, L.J. (2000). Low Temperature Sensitive, Compressively Strained In Ga As P Active (Λ = 0.78 0.85 µm) Region Diode Lasers. Ieee Photonics Technology Letters, 12(6), 603-605.