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dc.contributor.authorTansu, Nelsonen_US
dc.contributor.authorMawst, Luke J.en_US
dc.date.accessioned2007-07-13T19:33:07Z
dc.date.available2007-07-13T19:33:07Z
dc.date.issued2001en_US
dc.identifier.citationTansu, N., & Mawst, L.J. (2001). High Performance Strain Compensated In Ga As Ga As P Ga As (Λ = 1.17 ΜM) Quantum Well Diode Lasers. Ieee Photonics Technology Letters, 13(3), 179-181.en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/11076
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent61918 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.publisherInstitute of Electrical and Electronics Engineers Incen_US
dc.relation.ispartofhttp://www.ieee.org/en_US
dc.relation.ispartofhttp://ieeexplore.ieee.org/servlet/opac?punumber=68en_US
dc.rightsCopyright 2001 Institute of Electrical and Electronics Engineersen_US
dc.rights©20xx IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_US
dc.titleHigh-performance strain-compensated InGaAs-GaAsP-GaAs (λ = 1.17 μm) quantum-well diode lasersen_US
dc.identifier.doihttp://dx.doi.org/10.1109/68.914313en_US


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