High-performance strain-compensated InGaAs-GaAsP-GaAs (λ = 1.17 μm) quantum-well diode lasers
Mawst, Luke J.
Institute of Electrical and Electronics Engineers Inc
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Tansu, N., & Mawst, L.J. (2001). High Performance Strain Compensated In Ga As Ga As P Ga As (Λ = 1.17 ΜM) Quantum Well Diode Lasers. Ieee Photonics Technology Letters, 13(3), 179-181.