Low-threshold strain-compensated InGaAs(N) (λ = 1.19-1.31 μm) quantum-well lasers
Mawst, Luke J.
Institute of Electrical and Electronics Engineers Inc
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Tansu, N., & Mawst, L. J. (2002). Low Threshold Strain Compensated In Ga As(N) (Λ = 1.19 1.31 ΜM) Quantum Well Lasers. Ieee Photonics Technology Letters, 14(4), 444-446.