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dc.contributor.authorTansu, Nelsonen_US
dc.contributor.authorChang, Ying-Lanen_US
dc.contributor.authorTakeuchi, Tetsuyaen_US
dc.contributor.authorBour, David P.en_US
dc.contributor.authorCorzine, Scott W.en_US
dc.contributor.authorTan, Michael R.T.en_US
dc.contributor.authorMawst, Luke J.en_US
dc.date.accessioned2007-07-13T19:33:04Z
dc.date.available2007-07-13T19:33:04Z
dc.date.issued2002en_US
dc.identifier.citationTansu, N., Chang, Y.L., Takeuchi, T., Bour, D. P., Corzine, S. W., Tan, M. R.T., et al. (2002). Temperature Analysis And Characteristics Of Highly Strained In Ga As Ga As P Ga As (Λ > 1.17 ΜM) Quantum Well Lasers. Ieee Journal Of Quantum Electronics, 38(6), 640-651.en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/11070
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent380475 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.publisherInstitute of Electrical and Electronics Engineers Incen_US
dc.relation.ispartofhttp://www.ieee.org/en_US
dc.relation.ispartofhttp://ieeexplore.ieee.org/servlet/opac?punumber=3en_US
dc.rightsCopyright 2002 Institute of Electrical and Electronics Engineersen_US
dc.rights©20xx IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_US
dc.titleTemperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ > 1.17 μm) quantum-well lasersen_US
dc.identifier.doihttp://dx.doi.org/10.1109/JQE.2002.1005415en_US


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