Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ > 1.17 μm) quantum-well lasers

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Date
2002Author
Tansu, Nelson
Chang, Ying-Lan
Takeuchi, Tetsuya
Bour, David P.
Corzine, Scott W.
Tan, Michael R.T.
Mawst, Luke J.
Publisher
Institute of Electrical and Electronics Engineers Inc
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http://digital.library.wisc.edu/1793/11070Description
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Citation
Tansu, N., Chang, Y.L., Takeuchi, T., Bour, D. P., Corzine, S. W., Tan, M. R.T., et al. (2002). Temperature Analysis And Characteristics Of Highly Strained In Ga As Ga As P Ga As (Λ > 1.17 ΜM) Quantum Well Lasers. Ieee Journal Of Quantum Electronics, 38(6), 640-651.