Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ > 1.17 μm) quantum-well lasers
Bour, David P.
Corzine, Scott W.
Tan, Michael R.T.
Mawst, Luke J.
Institute of Electrical and Electronics Engineers Inc
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Tansu, N., Chang, Y.L., Takeuchi, T., Bour, D. P., Corzine, S. W., Tan, M. R.T., et al. (2002). Temperature Analysis And Characteristics Of Highly Strained In Ga As Ga As P Ga As (Λ > 1.17 ΜM) Quantum Well Lasers. Ieee Journal Of Quantum Electronics, 38(6), 640-651.