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dc.contributor.authorTansu, Nelsonen_US
dc.contributor.authorYeh, Jeng-Yaen_US
dc.contributor.authorMawst, Luke J.en_US
dc.date.accessioned2007-07-13T19:32:58Z
dc.date.available2007-07-13T19:32:58Z
dc.date.issued2003en_US
dc.identifier.citationThe following article appeared in Tansu, N., Yeh, J.Y., & Mawst, L. J. (2003). Improved Photoluminescence Of In Ga As N (In)Ga As P Quantum Well By Organometallic Vapor Phase Epitaxy Using Growth Pause Annealing. Applied Physics Letters, 82(18), 3008-3010. and may be found at http://link.aip.org/link/?apl/82/3008en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/11058
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent293294 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.publisherAmerican Institute of Physics Incen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://apl.aip.org/en_US
dc.rightsCopyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleImproved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealingen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.1572470en_US


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