Improved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing
Mawst, Luke J.
American Institute of Physics Inc
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The following article appeared in Tansu, N., Yeh, J.Y., & Mawst, L. J. (2003). Improved Photoluminescence Of In Ga As N (In)Ga As P Quantum Well By Organometallic Vapor Phase Epitaxy Using Growth Pause Annealing. Applied Physics Letters, 82(18), 3008-3010. and may be found at http://link.aip.org/link/?apl/82/3008