Improved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing
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- Author(s)
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Tansu, Nelson; Yeh, Jeng-Ya; Mawst, Luke J.
- Publisher
- American Institute of Physics Inc
- Citation
- The following article appeared in Tansu, N., Yeh, J.Y., & Mawst, L. J. (2003). Improved Photoluminescence Of In Ga As N (In)Ga As P Quantum Well By Organometallic Vapor Phase Epitaxy Using Growth Pause Annealing. Applied Physics Letters, 82(18), 3008-3010. and may be found at http://link.aip.org/link/?apl/82/3008
- Date
- 2003
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- http://www.aip.org; http://apl.aip.org/
- Description
- This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
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http://digital.library.wisc.edu/1793/11058
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