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dc.contributor.authorKhandekar, Anish A.en_US
dc.contributor.authorHawkins, Brian E.en_US
dc.contributor.authorKuech, Thomas F.en_US
dc.contributor.authorYeh, Jeng-Yaen_US
dc.contributor.authorMawst, Luke J.en_US
dc.contributor.authorMeyer, Jerry R.en_US
dc.contributor.authorVurgaftman, Igoren_US
dc.contributor.authorTansu, Nelsonen_US
dc.date.accessioned2007-07-13T19:32:55Z
dc.date.available2007-07-13T19:32:55Z
dc.date.issued2005en_US
dc.identifier.citationThe following article appeared in Khandekar, A.A., Hawkins, B.E., Kuech, T.F., Yeh, J.Y., Mawst, L.J., Meyer, J.R., et al. (2005). Characteristics Of Ga As N Ga As Sb Type Ii Quantum Wells Grown By Metalorganic Vapor Phase Epitaxy On Ga As Substrates. Journal Of Applied Physics, 98(12), 123525-. and may be found at http://link.aip.org/link/?jap/98/123525en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/11052
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent200995 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.publisherAmerican Institute of Physics Inc., Melville, NY 11747-4502, United Statesen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://jap.aip.orgen_US
dc.rightsCopyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleCharacteristics of GaAsNGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substratesen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.2148620en_US


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