Characteristics of GaAsNGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates
Khandekar, Anish A.
Hawkins, Brian E.
Kuech, Thomas F.
Mawst, Luke J.
Meyer, Jerry R.
American Institute of Physics Inc., Melville, NY 11747-4502, United States
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The following article appeared in Khandekar, A.A., Hawkins, B.E., Kuech, T.F., Yeh, J.Y., Mawst, L.J., Meyer, J.R., et al. (2005). Characteristics Of Ga As N Ga As Sb Type Ii Quantum Wells Grown By Metalorganic Vapor Phase Epitaxy On Ga As Substrates. Journal Of Applied Physics, 98(12), 123525-. and may be found at http://link.aip.org/link/?jap/98/123525