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On the operation configuration of SiGe HBTs based on power gain analysis

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dc.contributor.author Ma, Zhenqiang en_US
dc.contributor.author Jiang, Ningyue en_US
dc.date.accessioned 2007-07-13T19:32:34Z
dc.date.available 2007-07-13T19:32:34Z
dc.date.issued 2005 en_US
dc.identifier.citation Ma, Z., & Jiang, N. (2005). On The Operation Configuration Of Si Ge Hb Ts Based On Power Gain Analysis. Ieee Transactions On Electron Devices, 52(2), 248-255. en_US
dc.identifier.uri http://digital.library.wisc.edu/1793/11006
dc.description This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. en_US
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dc.format.mimetype application/pdf en_US
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dc.publisher Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ 08855-1331, United States en_US
dc.relation.ispartof http://www.ieee.org/ en_US
dc.relation.ispartof http://ieeexplore.ieee.org/servlet/opac?punumber=16 en_US
dc.rights Copyright 2005 Institute of Electrical and Electronics Engineers en_US
dc.rights ©20xx IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. en_US
dc.title On the operation configuration of SiGe HBTs based on power gain analysis en_US
dc.identifier.doi http://dx.doi.org/10.1109/TED.2004.842541 en_US

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