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    On the operation configuration of SiGe HBTs based on power gain analysis

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    Date
    2005
    Author
    Ma, Zhenqiang
    Jiang, Ningyue
    Publisher
    Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ 08855-1331, United States
    Metadata
    Show full item record
    Permanent Link
    http://digital.library.wisc.edu/1793/11006
    Related Material/Data
    http://www.ieee.org/
    http://ieeexplore.ieee.org/servlet/opac?punumber=16
    DOI
    http://dx.doi.org/10.1109/TED.2004.842541
    Type
    Article
    Description
    This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
    Citation
    Ma, Z., & Jiang, N. (2005). On The Operation Configuration Of Si Ge Hb Ts Based On Power Gain Analysis. Ieee Transactions On Electron Devices, 52(2), 248-255.
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    • College of Engineering Publications

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