On the operation configuration of SiGe HBTs based on power gain analysis
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Date
2005Author
Ma, Zhenqiang
Jiang, Ningyue
Publisher
Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ 08855-1331, United States
Metadata
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http://digital.library.wisc.edu/1793/11006Description
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Citation
Ma, Z., & Jiang, N. (2005). On The Operation Configuration Of Si Ge Hb Ts Based On Power Gain Analysis. Ieee Transactions On Electron Devices, 52(2), 248-255.