Base-region optimization of SiGe HBTs for high-frequency microwave power amplification
Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ 08855-1331, United States
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Ma, Z., & Jiang, N. (2006). Base Region Optimization Of Si Ge Hb Ts For High Frequency Microwave Power Amplification. Ieee Transactions On Electron Devices, 53(4), 875-883.