Base-region optimization of SiGe HBTs for high-frequency microwave power amplification
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- Author(s)
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Ma, Zhenqiang; Jiang, Ningyue
- Publisher
- Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ 08855-1331, United States
- Citation
- Ma, Z., & Jiang, N. (2006). Base Region Optimization Of Si Ge Hb Ts For High Frequency Microwave Power Amplification. Ieee Transactions On Electron Devices, 53(4), 875-883.
- Date
- 2006
- Part of
- http://www.ieee.org/; http://ieeexplore.ieee.org/servlet/opac?punumber=16
- Description
- This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
- Permanent link
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http://digital.library.wisc.edu/1793/11000
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