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High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: effect of substrate misorientation

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dc.contributor.author Mawst, Luke J. en_US
dc.contributor.author Bhattacharya, Arnab en_US
dc.contributor.author Nesnidal, Michael P. en_US
dc.contributor.author Lopez, James en_US
dc.contributor.author Botez, Dan en_US
dc.contributor.author Morris, Jeffrey A. en_US
dc.contributor.author Zory, Peter S. en_US
dc.date.accessioned 2007-07-13T19:32:27Z
dc.date.available 2007-07-13T19:32:27Z
dc.date.issued 1995 en_US
dc.identifier.citation The following article appeared in Mawst, L.J., Bhattacharya, A., Nesnidal, M., Lopez, J., Botez, D., Morris, J.A., et al. (1995). High Continuous Wave Output Power In Ga As/In Ga As P/In Ga P Diode Lasers: Effect Of Substrate Misorientation. Applied Physics Letters, 67(20), 2901-2903. and may be found at http://link.aip.org/link/?apl/67/2901 en_US
dc.identifier.uri http://digital.library.wisc.edu/1793/10992
dc.description This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. en_US
dc.description.provenance Made available in DSpace on 2007-07-13T19:32:27Z (GMT). No. of bitstreams: 1 file_1.pdf: 64960 bytes, checksum: 8c2c2689fa33cdf6634ebf816c2b683a (MD5) Previous issue date: 1995 en
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dc.format.mimetype application/pdf en_US
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dc.publisher American Inst of Physics, Woodbury, NY, USA en_US
dc.relation.ispartof http://www.aip.org en_US
dc.relation.ispartof http://apl.aip.org/ en_US
dc.rights Copyright 1995 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. en_US
dc.title High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: effect of substrate misorientation en_US
dc.identifier.doi http://dx.doi.org/10.1063/1.114836 en_US

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