| dc.contributor.author |
Mawst, Luke J. |
en_US |
| dc.contributor.author |
Bhattacharya, Arnab |
en_US |
| dc.contributor.author |
Nesnidal, Michael P. |
en_US |
| dc.contributor.author |
Lopez, James |
en_US |
| dc.contributor.author |
Botez, Dan |
en_US |
| dc.contributor.author |
Morris, Jeffrey A. |
en_US |
| dc.contributor.author |
Zory, Peter S. |
en_US |
| dc.date.accessioned |
2007-07-13T19:32:27Z |
|
| dc.date.available |
2007-07-13T19:32:27Z |
|
| dc.date.issued |
1995 |
en_US |
| dc.identifier.citation |
The following article appeared in Mawst, L.J., Bhattacharya, A., Nesnidal, M., Lopez, J., Botez, D., Morris, J.A., et al. (1995). High Continuous Wave Output Power In Ga As/In Ga As P/In Ga P Diode Lasers: Effect Of Substrate Misorientation. Applied Physics Letters, 67(20), 2901-2903. and may be found at http://link.aip.org/link/?apl/67/2901 |
en_US |
| dc.identifier.uri |
http://digital.library.wisc.edu/1793/10992 |
|
| dc.description |
This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. |
en_US |
| dc.description.provenance |
Made available in DSpace on 2007-07-13T19:32:27Z (GMT). No. of bitstreams: 1
file_1.pdf: 64960 bytes, checksum: 8c2c2689fa33cdf6634ebf816c2b683a (MD5)
Previous issue date: 1995 |
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| dc.format.extent |
64960 bytes |
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| dc.format.mimetype |
application/pdf |
en_US |
| dc.format.mimetype |
application/pdf |
|
| dc.publisher |
American Inst of Physics, Woodbury, NY, USA |
en_US |
| dc.relation.ispartof |
http://www.aip.org |
en_US |
| dc.relation.ispartof |
http://apl.aip.org/ |
en_US |
| dc.rights |
Copyright 1995 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
en_US |
| dc.title |
High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: effect of substrate misorientation |
en_US |
| dc.identifier.doi |
http://dx.doi.org/10.1063/1.114836 |
en_US |
