High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: effect of substrate misorientation
Mawst, Luke J.
Nesnidal, Michael P.
Morris, Jeffrey A.
Zory, Peter S.
American Inst of Physics, Woodbury, NY, USA
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The following article appeared in Mawst, L.J., Bhattacharya, A., Nesnidal, M., Lopez, J., Botez, D., Morris, J.A., et al. (1995). High Continuous Wave Output Power In Ga As/In Ga As P/In Ga P Diode Lasers: Effect Of Substrate Misorientation. Applied Physics Letters, 67(20), 2901-2903. and may be found at http://link.aip.org/link/?apl/67/2901