Show simple item record

dc.contributor.authorMirabedini, Ali R.en_US
dc.contributor.authorMawst, Luke J.en_US
dc.contributor.authorBotez, Danen_US
dc.contributor.authorMarsland, Robert A.en_US
dc.date.accessioned2007-07-13T19:32:12Z
dc.date.available2007-07-13T19:32:12Z
dc.date.issued1997en_US
dc.identifier.citationThe following article appeared in Mirabedini, A.R., Mawst, L.J., Botez, D., & Marsland, R.A. (1997). High Peak Current Density Strained Layer In0.3 Ga0.7 As/Al0.8 Ga0.2 As Resonant Tunneling Diodes Grown By Metal Organic Chemical Vapor Deposition. Applied Physics Letters, 70(21), 2867-9. and may be found at http://link.aip.org/link/?apl/70/2867en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/10958
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent258797 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://apl.aip.org/en_US
dc.rightsCopyright 1997 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleHigh peak-current-density strained-layer In0.3Ga0.7As/Al0.8Ga0.2As resonant tunneling diodes grown by metal-organic chemical vapor depositionen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.119027en_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record