High peak-current-density strained-layer In0.3Ga0.7As/Al0.8Ga0.2As resonant tunneling diodes grown by metal-organic chemical vapor deposition
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Date
1997Author
Mirabedini, Ali R.
Mawst, Luke J.
Botez, Dan
Marsland, Robert A.
Publisher
American Institute of Physics
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http://digital.library.wisc.edu/1793/10958Description
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Citation
The following article appeared in Mirabedini, A.R., Mawst, L.J., Botez, D., & Marsland, R.A. (1997). High Peak Current Density Strained Layer In0.3 Ga0.7 As/Al0.8 Ga0.2 As Resonant Tunneling Diodes Grown By Metal Organic Chemical Vapor Deposition. Applied Physics Letters, 70(21), 2867-9. and may be found at http://link.aip.org/link/?apl/70/2867