High peak-current-density strained-layer In0.3Ga0.7As/Al0.8Ga0.2As resonant tunneling diodes grown by metal-organic chemical vapor deposition
Mirabedini, Ali R.
Mawst, Luke J.
Marsland, Robert A.
American Institute of Physics
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The following article appeared in Mirabedini, A.R., Mawst, L.J., Botez, D., & Marsland, R.A. (1997). High Peak Current Density Strained Layer In0.3 Ga0.7 As/Al0.8 Ga0.2 As Resonant Tunneling Diodes Grown By Metal Organic Chemical Vapor Deposition. Applied Physics Letters, 70(21), 2867-9. and may be found at http://link.aip.org/link/?apl/70/2867