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dc.contributor.authorLiu, Zheng-Yuen_US
dc.contributor.authorGokhale, Amit A.en_US
dc.contributor.authorMavrikakis, Manosen_US
dc.contributor.authorSaulys, Dovas A.en_US
dc.contributor.authorKuech, Thomas F.en_US
dc.date.accessioned2007-07-13T19:31:14Z
dc.date.available2007-07-13T19:31:14Z
dc.date.issued2004en_US
dc.identifier.citationThe following article appeared in Liu, Z.Y., Gokhale, A.A., Mavrikakis, M., Saulys, D.A., & Kuech, T.F. (2004). Modifications Of The Electronic Structure Of Ga Sb Surface By Chalcogen Atoms: S, Se, And Te. Journal Of Applied Physics, 96(8), 4302-4307. and may be found at http://link.aip.org/link/?jap/96/4302en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/10832
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent97962 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.publisherAmerican Institute of Physics Inc., Melville, NY 11747-4502, United Statesen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://jap.aip.orgen_US
dc.rightsCopyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleModifications of the electronic structure of GaSb surface by chalcogen atoms: S, Se, and Teen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.1790572en_US


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