Compensation of shallow impurities in oxygen-doped metalorganic vapor phase epitaxy grown GaAs

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Date
1996Author
Huang, Jen-Wu
Bray, Kevin L.
Kuech, Thomas F.
Publisher
American Institute of Physics
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http://digital.library.wisc.edu/1793/10658Description
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Citation
The following article appeared in Huang, J.W., Bray, K.L., & Kuech, T.F. (1996). Compensation Of Shallow Impurities In Oxygen Doped Metalorganic Vapor Phase Epitaxy Grown Ga As. Journal Of Applied Physics, 80(12), 6819-26. and may be found at http://link.aip.org/link/?jap/80/6819