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dc.contributor.authorBhattacharya, Arnaben_US
dc.contributor.authorMawst, Luke J.en_US
dc.contributor.authorNayak, Sabyasachien_US
dc.contributor.authorLi, Jiayingen_US
dc.contributor.authorKuech, Thomas F.en_US
dc.date.accessioned2007-07-13T19:29:52Z
dc.date.available2007-07-13T19:29:52Z
dc.date.issued1996en_US
dc.identifier.citationThe following article appeared in Bhattacharya, A., Mawst, L.J., Nayak, S., Li, J., & Kuech, T.F. (1996). Interface Structures Of In Ga As/In Ga As P/In Ga P Quantum Well Laser Diodes Grown By Metalorganic Chemical Vapor Deposition On Ga As Substrates. Applied Physics Letters, 68(16), 2240-2242. and may be found at http://link.aip.org/link/?apl/68/2240en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/10650
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent318956 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.publisherAmerican Inst of Physics, Woodbury, NY, USAen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://apl.aip.org/en_US
dc.rightsCopyright 1996 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleInterface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substratesen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.115871en_US


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