Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates
Mawst, Luke J.
Kuech, Thomas F.
American Inst of Physics, Woodbury, NY, USA
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The following article appeared in Bhattacharya, A., Mawst, L.J., Nayak, S., Li, J., & Kuech, T.F. (1996). Interface Structures Of In Ga As/In Ga As P/In Ga P Quantum Well Laser Diodes Grown By Metalorganic Chemical Vapor Deposition On Ga As Substrates. Applied Physics Letters, 68(16), 2240-2242. and may be found at http://link.aip.org/link/?apl/68/2240