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dc.contributor.authorIngerly, Douglas B.en_US
dc.contributor.authorChang, Y. Austinen_US
dc.contributor.authorPerkins, Nathan R.en_US
dc.contributor.authorKuech, Thomas F.en_US
dc.date.accessioned2007-07-13T19:29:47Z
dc.date.available2007-07-13T19:29:47Z
dc.date.issued1997en_US
dc.identifier.citationThe following article appeared in Ingerly, D.B., Chang, Y.A., Perkins, N.R., & Kuech, T.F. (1997). Ohmic Contacts To N Ga N Using Pt In2. Applied Physics Letters, 70(1), 108-10. and may be found at http://link.aip.org/link/?apl/70/108en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/10638
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent75914 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://apl.aip.org/en_US
dc.rightsCopyright 1997 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleOhmic contacts to n-GaN using PtIn2en_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.119277en_US


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