Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy
Kuech, Thomas F.
American Institute of Physics
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The following article appeared in Zhang, R., & Kuech, T.F. (1998). Photoluminescence Of Carbon In Situ Doped Ga N Grown By Halide Vapor Phase Epitaxy. Applied Physics Letters, 72(13), 1611-13. and may be found at http://link.aip.org/link/?apl/72/1611