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X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN

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dc.contributor.author Kim, Jong Kyu en_US
dc.contributor.author Lee, Jong-Lam en_US
dc.contributor.author Rickert, Kimberly Anne en_US
dc.contributor.author Ellis, Arthur B. en_US
dc.contributor.author Himpsel, Franz J. en_US
dc.contributor.author Dwikusuma, Fransiska en_US
dc.contributor.author Kuech, Thomas F. en_US
dc.date.accessioned 2007-07-13T19:29:34Z
dc.date.available 2007-07-13T19:29:34Z
dc.date.issued 2002 en_US
dc.identifier.citation The following article appeared in Jong, K. Kyu, L.J.L., Rickert, K.A., Ellis, A.B., Himpsel, F.J., Dwikusuma, F., et al. (2002). X Ray Photoemission Determination Of The Schottky Barrier Height Of Metal Contacts To N Ga N And P Ga N. Journal Of Applied Physics, 92(11), 6671-6678. and may be found at http://link.aip.org/link/?jap/92/6671 en_US
dc.identifier.uri http://digital.library.wisc.edu/1793/10610
dc.description This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. en_US
dc.description.provenance Made available in DSpace on 2007-07-13T19:29:34Z (GMT). No. of bitstreams: 1 file_1.pdf: 274148 bytes, checksum: 0f5da59af939a02213f3ffa5b624cc6f (MD5) Previous issue date: 2002 en
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dc.format.mimetype application/pdf en_US
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dc.publisher American Institute of Physics Inc en_US
dc.relation.ispartof http://www.aip.org en_US
dc.relation.ispartof http://jap.aip.org en_US
dc.rights Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. en_US
dc.title X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN en_US
dc.identifier.doi http://dx.doi.org/10.1063/1.1518129 en_US

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