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dc.contributor.authorDwikusuma, Fransiskaen_US
dc.contributor.authorKuech, Thomas F.en_US
dc.date.accessioned2007-07-13T19:29:29Z
dc.date.available2007-07-13T19:29:29Z
dc.date.issued2003en_US
dc.identifier.citationThe following article appeared in Dwikusuma, F., & Kuech, T.F. (2003). X Ray Photoelectron Spectroscopic Study On Sapphire Nitridation For Ga N Growth By Hydride Vapor Phase Epitaxy: Nitridation Mechanism. Journal Of Applied Physics, 94(9), 5656-5664. and may be found at http://link.aip.org/link/?jap/94/5656en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/10598
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent351429 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.publisherAmerican Institute of Physics Incen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://jap.aip.orgen_US
dc.rightsCopyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleX-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanismen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.1618357en_US


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