X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism

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Date
2003Author
Dwikusuma, Fransiska
Kuech, Thomas F.
Publisher
American Institute of Physics Inc
Metadata
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http://digital.library.wisc.edu/1793/10598Description
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Citation
The following article appeared in Dwikusuma, F., & Kuech, T.F. (2003). X Ray Photoelectron Spectroscopic Study On Sapphire Nitridation For Ga N Growth By Hydride Vapor Phase Epitaxy: Nitridation Mechanism. Journal Of Applied Physics, 94(9), 5656-5664. and may be found at http://link.aip.org/link/?jap/94/5656